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D3899949 - D38999K / D38999J 500 Cycle Contact

D3899949_541486.PDF Datasheet


 Full text search : D38999K / D38999J 500 Cycle Contact


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C-Media Electronics Inc.
C-Media Electronics, Inc.
TT electronics PLC
1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N 165 V, 500 mA, gold bonded germanium diode
100 V, 500 mA, gold bonded germanium diode
12 V, 500 mA, gold bonded germanium diode
90 V, 500 mA, gold bonded germanium diode
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75 V, 500 mA, gold bonded germanium diode
120 V, 500 mA, gold bonded germanium diode
70 V, 500 mA, gold bonded germanium diode
80 V, 500 mA, gold bonded germanium diode
115 V, 500 mA, gold bonded germanium diode
60 V, 500 mA, gold bonded germanium diode
BKC International Electronics
ETC[ETC]
IDT71V2577YS75BQI IDT71V2577YS75BGI IDT71V2579S85B 128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 128K X 36 CACHE SRAM, 8 ns, PQFP100
128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 128K的x 36256亩18 3.3同步SRAM.5VI / O的流量通过输出脉冲计数器,单周期取
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128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 128K X 36 CACHE SRAM, 7.5 ns, PBGA119
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128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect 256K X 18 CACHE SRAM, 8 ns, PBGA165
Integrated Device Technology, Inc.
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P295BE681M500A Film, Metallized Paper, Safety, P295, 680 pF, 20%, 1,500 V, 500 V, 115C, Lead Spacing = 15mm
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Powerex Power Semiconductor...
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Powerex, Inc.
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Integrated Silicon Solution, Inc.
Integrated Silicon Solution Inc
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Diodes, Inc.
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